US Patent Issued to FUJI ELECTRIC on June 24 for "Semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,342,556, issued on June 24, was assigned to FUJI ELECTRIC Co. LTD. (Kanagawa, Japan).

"Semiconductor device" was invented by Misaki Takahashi (Matsumoto, Japan), Yuichi Harada (Matsumoto, Japan) and Kouta Yokoyama (Matsumoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a semiconductor device that includes a first conductivity type well region below a gate runner portion, wherein a diode region includes first contact portions, a first conductivity type anode region, and a second conductivity type cathode region; wherein the well region contacts the diode region in the first direction, and when an end of the well region, an end of at ...