ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,232, issued on June 17, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan).
"Semiconductor device" was invented by Shinichiro Matsunaga (Matsumoto, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first semiconductor layer of a first conductivity type; a second semiconductor layer of the first conductivity type; a first semiconductor region of a second conductivity type; a second semiconductor region of the first conductivity type; a trench; a gate insulating film; a gate electrode; a third semiconductor region of the second conductivity type; a fourth semiconductor region of the second conductivity type; ...