ALEXANDRIA, Va., July 23 -- United States Patent no. 12,369,370, issued on July 22, was assigned to FUJI ELECTRIC Co. LTD. (Kanagawa, Japan).
"Semiconductor device and manufacturing method for semiconductor device" was invented by Takahiro Tamura (Matsumoto, Japan) and Yuichi Onozawa (Matsumoto, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a manufacturing method for a semiconductor device including a transistor portion and a diode portion. The manufacturing method includes forming, on an upper surface of a semiconductor substrate including a bulk donor, an emitter region of the transistor portion and an anode region of the diode portion as an active region, performing ion implantation of ...