US Patent Issued to FUJI ELECTRIC on July 1 for "Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,451, issued on July 1, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan).

"Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device" was invented by Shingo Hayashi (Matsumoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A silicon carbide semiconductor device includes a silicon carbide semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type, a second semiconductor layer of the first conductivity type, a third semiconductor layer of the first conductivity type, a fourth semiconductor layer of a second conductivity type, first semiconduc...