US Patent Issued to FUJI ELECTRIC on Jan. 27 for "Silicon carbide semiconductor device and silicon carbide semiconductor substrate" (Japanese Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,538, issued on Jan. 27, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan).

"Silicon carbide semiconductor device and silicon carbide semiconductor substrate" was invented by Makoto Utsumi (Nagano, Japan) and Masaki Miyazato (Nagano, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An n+-type SiC substrate constituting an n+-type drain region contains a concentration of nitrogen, which is a donor, within a predetermined range (predetermined impurity concentration of the n+-type drain region) and, as impurities other than the nitrogen, contains boron, aluminum, and titanium such that a sum of respective concentrations of the boron, aluminum...