US Patent Issued to FUJI ELECTRIC on Jan. 13 for "Semiconductor device and manufacturing method" (Japanese Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,016, issued on Jan. 13, was assigned to FUJI ELECTRIC Co. LTD. (Kanagawa, Japan).

"Semiconductor device and manufacturing method" was invented by Seiji Noguchi (Matsumoto, Japan), Ryutaro Hamasaki (Matsumoto, Japan), Daisuke Ozaki (Okaya, Japan), Yosuke Sakurai (Azumino, Japan) and Takuya Yamada (Matsumoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a semiconductor device including: a first trench contact portion provided to an inside of a contact region; a second trench contact portion provided to an inside of an emitter region; a first plug portion of a second conductivity type, which is provided in contact with a lower end o...