US Patent Issued to FUJI ELECTRIC on Jan. 13 for "Nitride semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,030, issued on Jan. 13, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan).

"Nitride semiconductor device" was invented by Tsurugi Kondo (Hachioji, Japan), Katsunori Ueno (Matsumoto, Japan), Shinya Takashima (Hachioji, Japan) and Ryo Tanaka (Hino, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A nitride semiconductor device including: a gallium nitride substrate; and a vertical MOSFET provided on the gallium nitride substrate, the vertical MOSFET including:an N-type drift region provided in the gallium nitride substrate; a P-type well region provided in the drift region; an N-type source region provided in the well region; a gate insulat...