US Patent Issued to FUJI ELECTRIC on Feb. 4 for "Semiconductor device and fabrication method thereof" (Japanese Inventors)

ALEXANDRIA, Va., Feb. 5 -- United States Patent no. 12,218,024, issued on Feb. 4, was assigned to FUJI ELECTRIC Co. LTD. (Kanagawa, Japan).

"Semiconductor device and fabrication method thereof" was invented by Motoyoshi Kubouchi (Matsumoto, Japan) and Soichi Yoshida (Matsumoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In a semiconductor device, it is preferable to suppress a variation in characteristics of a temperature sensor. The semiconductor device is provided that includes a semiconductor substrate having a first conductivity type drift region, a transistor section provided in the semiconductor substrate, a diode section provided in the semiconductor substrate, a second conductivity type wel...