ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,355, issued on Feb. 3, was assigned to FUJI ELECTRIC Co. LTD. (Kanagawa, Japan).
"Semiconductor device" was invented by Misaki Uchida (Matsumoto, Japan), Takashi Yoshimura (Matsumoto, Japan), Hiroshi Takishita (Matsumoto, Japan), Shuntaro Yaguchi (Matsumoto, Japan), Seiji Noguchi (Matsumoto, Japan) and Yosuke Sakurai (Azumino, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a semiconductor device including: a buffer region having a doping concentration higher than a bulk donor concentration; a first low-concentration hydrogen peak in the buffer region; a second low-concentration hydrogen peak in the buffer region closer to a lower su...