ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,313, issued on Feb. 17, was assigned to FUJI ELECTRIC Co. LTD. (Kanagawa, Japan).
"Semiconductor device" was invented by Hong-fei Lu (Matsumoto, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a semiconductor device including: a plurality of trench portions which are provided to positions below a base region from an upper surface of a semiconductor substrate and are arranged next to one another in a first direction on the upper surface of the semiconductor substrate; a first lower end region of a second conductivity type, which is arranged at a first depth position and is provided in contact with a lower end of two or more of the tr...