US Patent Issued to FUJI ELECTRIC on Feb. 10 for "Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,368, issued on Feb. 10, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan).

"Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device" was invented by Yasuyuki Kawada (Matsumoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A bottom of a trench is an Si plane or a C plane while sidewalls of the trench are an m-plane. In the trench, a gate electrode is provided via a gate insulating film. The gate insulating film is a HTO film with a thickness of at least 50 nm. By a post-HTO-deposition annealing at a temperature in a range of 1250 degrees C. to 1300 degrees C. under a mixed gas atmosphere co...