US Patent Issued to FUJI ELECTRIC on Feb. 10 for "Semiconductor device and manufacturing method of semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,693, issued on Feb. 10, was assigned to FUJI ELECTRIC Co. LTD. (Kanagawa, Japan).

"Semiconductor device and manufacturing method of semiconductor device" was invented by Naruhisa Nagata (Matsumoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a manufacturing method of a semiconductor device including a semiconductor substrate, including: forming an interlayer dielectric film above the semiconductor substrate; forming contact holes exposed from a part of an upper surface of the semiconductor substrate on the interlayer dielectric film; and forming an metal electrode including an element of aluminum by DC sputtering above the inter...