ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,676, issued on Feb. 10, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan).
"Method of manufacturing semiconductor device" was invented by Kohichi Hashimoto (Matsumoto, Japan), Shunsuke Tanaka (Matsumoto, Japan) and Yuya Takahashi (Matsumoto, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor device having first and second main surfaces opposite to each other. The method includes: forming a first electrode at the first main surface of the semiconductor wafer; applying a first tape to the second main surface of the semiconductor wafer; forming roughness at a portion of a surface of the first tape; app...