ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,495,596, issued on Dec. 9, was assigned to FUJI ELECTRIC Co. LTD. (Kanagawa, Japan).
"Semiconductor device and manufacturing method" was invented by Koh Yoshikawa (Matsumoto, Japan), Kosuke Yoshida (Matsumoto, Japan) and Nao Suganuma (Matsumoto, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a semiconductor device including a semiconductor substrate having a first dopant of a first conductivity type and a second dopant of a second conductivity type, both the first dopant and the second dopant being distributed in an entire part of the semiconductor substrate, the semiconductor substrate including a drift region of the first conductivity...