ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,494,451, issued on Dec. 9, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan).
"Semiconductor device" was invented by Fumihiko Momose (Nagano, Japan), Hirohisa Oyama (Matsumoto, Japan) and Yasuaki Hozumi (Matsumoto, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device encompasses a mounting member having a copper-based wiring layer; first covering layer which contains nickel, covering the wiring layer so that a part of upper surface of the wiring layer is exposed in opening; joint layer metallurgically joined to the wiring layer in the opening; second covering layer which contains nickel, metallurgically joined to the joint l...