US Patent Issued to FUJI ELECTRIC on Dec. 23 for "Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,507,452, issued on Dec. 23, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan).

"Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device" was invented by Yasuyuki Hoshi (Matsumoto, Japan) and Shingo Hayashi (Matsumoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A silicon carbide semiconductor device has a first semiconductor region of a first conductivity type, provided in a semiconductor substrate, spanning an active region and a termination region. A second semiconductor region of a second conductivity type is provided between a first main surface and the first semiconductor region, in the ...