ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,507,428, issued on Dec. 23, was assigned to FUJI ELECTRIC Co. LTD. (Kanagawa, Japan).
"Semiconductor device including transistor portion and diode portion" was invented by Motoyoshi Kubouchi (Matsumoto, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a semiconductor device in which a lifetime control region including a lifetime killer is provided, below a base region, from at least a part of a transistor portion to a diode portion, the transistor portion includes: a main region spaced apart from the diode portion in a top view; a boundary region located between the main region and the diode portion and overlapping the lifetime control r...