ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,396,189, issued on Aug. 19, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan).
"Semiconductor device and method of manufacturing the same" was invented by Motoyoshi Kubouchi (Matsumoto, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: a semiconductor substrate; a plurality of trenches provided on a top surface side of the semiconductor substrate; am insulated gate electrode structure buried inside the respective trenches; an interlayer insulating film deposited on top surfaces of the semiconductor substrate and the insulated gate electrode structure; and a silicide layer deposited at a bottom of a contact hole...