US Patent Issued to FUJI ELECTRIC on Aug. 12 for "Semiconductor device and method of manufacturing semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,389,639, issued on Aug. 12, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan).

"Semiconductor device and method of manufacturing semiconductor device" was invented by Yusuke Kobayashi (Nagareyama, Japan), Yasuhiko Oonishi (Matsumoto, Japan) and Masanobu Iwaya (Matsumoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device has an active region through which current flows and an edge termination structure region arranged outside the active region. The semiconductor device includes a low-concentration semiconductor layer of a first conductivity type, and formed in the edge termination structure region, on a front surface of a...