US Patent Issued to FUJI ELECTRIC on April 8 for "Semiconductor device having base region beneath trench gate" (Japanese Inventor)

ALEXANDRIA, Va., April 9 -- United States Patent no. 12,272,748, issued on April 8, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan).

"Semiconductor device having base region beneath trench gate" was invented by Keiji Okumura (Matsumoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device having an active portion and a gate pad portion on a semiconductor substrate includes: a first semiconductor layer of a first conductivity type; and a second semiconductor layer of a second conductivity type. The active portion has: first semiconductor regions of the first conductivity type; a first electrode provided on the first semiconductor regions; and first trenches. The gate pad portio...