US Patent Issued to FUJI ELECTRIC on April 22 for "Semiconductor device and manufacturing method of the same" (Japanese Inventor)

ALEXANDRIA, Va., June 6 -- United States Patent no. 12,283,608, issued on April 22, was assigned to FUJI ELECTRIC Co. LTD. (Kanagawa, Japan).

"Semiconductor device and manufacturing method of the same" was invented by Tetsutaro Imagawa (Matsumoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a semiconductor device having a transistor portion and a diode portion, including: a drift region of a first conductivity type provided in a semiconductor substrate; an accumulation region of a first conductivity type provided on a front surface side of the semiconductor substrate with respect to the drift region in the transistor portion and the diode portion; and a first lifetime control region prov...