US Patent Issued to FUJI ELECTRIC, DENSO on March 18 for "Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,255,228, issued on March 18, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan) and DENSO Corp. (Kariya, Japan).

"Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device" was invented by Masanobu Iwaya (Matsumoto, Japan) and Kensuke Hata (Kariya, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A silicon carbide semiconductor device includes, on a front surface of a silicon carbide semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type, a second semiconductor layer of a second conductivity type, a third semiconductor layer of the first cond...