US Patent Issued to FUJI ELECTRIC, DENSO on Jan. 27 for "Manufacturing method and inspection method of semiconductor device including obtaining an image of the device and determining defects of a metal electrode" (Japanese Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,535,432, issued on Jan. 27, was assigned to FUJI ELECTRIC Co. LTD. (Kanagawa, Japan) and DENSO Corp. (Aichi, Japan).

"Manufacturing method and inspection method of semiconductor device including obtaining an image of the device and determining defects of a metal electrode" was invented by Masayuki Miyazaki (Matsumoto, Japan), Taketo Tsuji (Chiba, Japan), Makoto Terakawa (Matsumoto, Japan), Kensuke Hata (Aichi, Japan) and Tomohiro Mimura (Aichi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a manufacturing method of a semiconductor device having a semiconductor substrate. The manufacturing method includes forming an interlayer insulati...