US Patent Issued to FS-SEMI SEMICONDUCTOR on May 13 for "Super short channel nor flash cell array and programming method thereof" (Taiwanese Inventor)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,324, issued on May 13, was assigned to FS-SEMI SEMICONDUCTOR Corp. LTD. (Hsinchu County, Taiwan).

"Super short channel nor flash cell array and programming method thereof" was invented by Lee Wang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A Super Short Channel NOR-type (SSC NOR) flash array is disclosed. Upon the new Channel Induced Ternary Electron programming scheme for resolving the punch-through issue caused by the gate short channel of NVM cell devices, the gate length of NVM cell devices can be further shrunk below 100 nm for NOR flash array. The cell device of SSC NOR flash can be then scaled down to achieve the m...