US Patent Issued to FRAUNHOFER-GESELLSCHAFT ZUR FORDERUNG DER ANGEWANDTEN FORSCHUNG on Feb. 10 for "Method for producing a three-dimensionally integrated semiconductor memory" (German Inventor)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,326, issued on Feb. 10, was assigned to FRAUNHOFER-GESELLSCHAFT ZUR FORDERUNG DER ANGEWANDTEN FORSCHUNG E.V. (Munich).

"Method for producing a three-dimensionally integrated semiconductor memory" was invented by Martin Heigl (Munich).

According to the abstract* released by the U.S. Patent & Trademark Office: "The concept relates to a method for producing a three-dimensionally integrated semiconductor memory. A layer stack having several individual layers of different material types is provided and individual layers of a first material type are etched out selectively from the layer stack by a dry etching process. Individual layers of a third material type are generated either by f...