ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,965, issued on Dec. 30, was assigned to FORCE MOS TECHNOLOGY Co. LTD. (New Taipei, Taiwan).
"Trench-gate field effect transistor" was invented by Kao-Way Tu (Hsinchu, Taiwan), Yuan-Shun Chang (Hsinchu, Taiwan), Po-An Tsai (New Taipei, Taiwan) and Huan-Chung Weng (New Taipei, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A trench-gate field effect transistor includes a plurality of trenches, a plurality of gate electrode units, and a plurality of source electrode units. Each of the trenches has a first trench region, a second trench region having a width less than that of the first trench region, and a neck trench region extending between the...