US Patent Issued to FLOSFIA on Sept. 30 for "Semiconductor device and method of manufacturing semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,432,947, issued on Sept. 30, was assigned to FLOSFIA INC. (Kyoto, Japan).

"Semiconductor device and method of manufacturing semiconductor device" was invented by Takayoshi Oshima (Kyoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: a semiconductor film including a Schottky junction region and an Ohmic junction region; a Schottky electrode arranged on the Schottky junction region; and an Ohmic electrode arranged on the Ohmic junction region, the Schottky junction region having a first dislocation density, the Ohmic junction region having a second dislocation region, and the first dislocation density being smaller...