ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,108, issued on Oct. 21, was assigned to FLOSFIA INC. (Kyoto, Japan).
"Semiconductor element and semiconductor device" was invented by Yusuke Matsubara (Kyoto, Japan), Osamu Imafuji (Kyoto, Japan), Hiroyuki Ando (Kyoto, Japan), Hideki Takehara (Kyoto, Japan), Takashi Shinohe (Kyoto, Japan) and Mitsuru Okigawa (Kyoto, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a semiconductor element including: a multilayer structure including: a conductive substrate; and an oxide semiconductor film arranged directly on the conductive substrate or over the conductive substrate via a different layer, the oxide semiconductor film including an oxide...