US Patent Issued to FERRORELECTRIC MEMORY on April 22 for "Locally embedded bad sector marking for a memory" (Italian Inventor)

ALEXANDRIA, Va., June 6 -- United States Patent no. 12,283,346, issued on April 22, was assigned to FERRORELECTRIC MEMORY GMBH (Dresden, Germany).

"Locally embedded bad sector marking for a memory" was invented by Stefano Sivero (Comun Nuovo, Italy).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed herein is a memory arrangement and method thereof for locally marking bad memory cells. The memory arrangement includes a group of memory cells and a driver circuit for operating the group of memory cells. The driver circuit includes a remanent-polarizable memory element (e.g., a remanent-polarizable field-effect transistor). Depending on a memory state of the remanent-polarizable memory element, the driver ...