US Patent Issued to FERROELECTRIC MEMORY on Nov. 4 for "Memory cell, memory cell arrangement, and methods thereof" (German Inventor)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,781, issued on Nov. 4, was assigned to FERROELECTRIC MEMORY GMBH (Dresden, Germany).

"Memory cell, memory cell arrangement, and methods thereof" was invented by Stefan Ferdinand Muller (Dresden, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "Various aspects relate to a memory cell including: a field-effect transistor structure, the field-effect transistor structure including a gate structure to control a current flow in a channel, the gate structure including a gate isolation and a floating gate, wherein at least a part of the gate structure extends from a surface of a semiconductor layer into the semiconductor layer; and a capacitive memory ...