US Patent Issued to Ferroelectric Memory on Nov. 18 for "Memory cell including spontaneously polarizable capacitor structure" (German Inventor)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,745, issued on Nov. 18, was assigned to Ferroelectric Memory GmbH (Dresden, Germany).

"Memory cell including spontaneously polarizable capacitor structure" was invented by Stefan Ferdinand Muller (Radebeul, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "Various aspects relate to a memory cell including: a thermally insulating layer disposed over one or more metallization layers of a metallization; an embedding structure disposed over the thermally insulating layer; and a spontaneously polarizable capacitor structure disposed at least partially within the embedding structure, wherein the spontaneously polarizable capacitor structure includes ...