US Patent Issued to FERROELECTRIC MEMORY on March 18 for "Memory cell with access device and memory capacitor structures" (German Inventor)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,254,914, issued on March 18, was assigned to FERROELECTRIC MEMORY GMBH (Dresden, Germany).

"Memory cell with access device and memory capacitor structures" was invented by Johannes Ocker (Dresden, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory cell arrangement is provided that may include: one or more memory cells, each memory cell of the one or more memory cells including: a field-effect transistor structure; a plurality of first control nodes; a plurality of first capacitor structures, a second control node; and a second capacitor structure including a first electrode connected to the second control node and a second electrode connec...