US Patent Issued to FERROELECTRIC MEMORY on June 17 for "Ferroelectric memory circuit and reading method thereof" (German Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,334,128, issued on June 17, was assigned to FERROELECTRIC MEMORY GMBH (Dresden, Germany).

"Ferroelectric memory circuit and reading method thereof" was invented by Marko Noack (Dresden, Germany) and Georgi Kuzmanov (Dresden, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "A ferroelectric memory circuit (100) includes: a memory cell (102), wherein a memory state (102s) of the memory cell (102) is switchable between a first memory state and a second memory state, the memory cell (102) further configured to output an electrical current (101) in response to receiving a readout voltage (103); and a sense circuit (104) configured to output an output vo...