US Patent Issued to FERROELECTRIC MEMORY on April 22 for "Devices, methods, and systems for a multilevel memory cell" (Italian Inventor)

ALEXANDRIA, Va., June 6 -- United States Patent no. 12,283,300, issued on April 22, was assigned to FERROELECTRIC MEMORY GMBH (Dresden, Germany).

"Devices, methods, and systems for a multilevel memory cell" was invented by Stefano Sivero (Comun Nuovo, Italy).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed herein are devices, methods, and systems for reading/writing memory cells of a memory, where the memory cells includes a memory element that is writable to at least three different remanent polarization states. A sensing circuit determines, in a read operation, a stored state of the memory element from among the at least three different remanent polarization states based on a sensed change in a rema...