US Patent Issued to FERDINAND-BRAUN-INSTITUT GGMBH LEIBNIZ-INSTITUT FUR HOCHSTFREQUENZTECHNIK on Oct. 28 for "Circuit assembly for limiting the gate current at a field-effect transistor" (German Inventor)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,456,972, issued on Oct. 28, was assigned to FERDINAND-BRAUN-INSTITUT GGMBH LEIBNIZ-INSTITUT FUR HOCHSTFREQUENZTECHNIK (Berlin).

"Circuit assembly for limiting the gate current at a field-effect transistor" was invented by Sascha Krause (Berlin).

According to the abstract* released by the U.S. Patent & Trademark Office: "A circuit arrangement for limiting the gate current at a field effect transistor, FET, comprises a first FET and a DC supply network connected to a gate terminal of the first FET; wherein the supply network provides a voltage Vgg to the gate terminal of the first FET via a first connection comprising a high impedance resistor R1 and a second FET connected in series th...