ALEXANDRIA, Va., March 26 -- United States Patent no. 12,261,594, issued on March 25, was assigned to FAST SIC SEMICONDUCTOR Inc. (Hsinchu, Taiwan).
"Cascode diode circuit" was invented by Fu-Jen Hsu (Hsinchu, Taiwan), Cheng-Tyng Yen (Hsinchu, Taiwan) and Hsiang-Ting Hung (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments relate to a cascode diode circuit. The cascode diode circuit comprises a normally on transistor, a low voltage diode and a high voltage diode. The normally on transistor has a gate, a drain, and a source. The low voltage diode has a cathode connected to the source of the normally on transistor and an anode connected to the gate of the normally on transistor. The hig...