ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,495,576, issued on Dec. 9, was assigned to FAST SIC SEMICONDUCTOR Inc. (Hsinchu, Taiwan).
"Silicon carbide semiconductor device" was invented by Cheng-Tyng Yen (Hsinchu, Taiwan), Hsiang-Ting Hung (Hsinchu, Taiwan) and Fu-Jen Hsu (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A silicon carbide semiconductor device comprises a drift layer, a plurality of transistor cells and a gate structure. Each of the transistor cells comprises a first doped region, a second doped region, a third doped region and a fourth doped region. The first doped region is disposed in the drift layer. The second doped region is disposed in the first doped region. T...