US Patent Issued to Excelliance MOS on Sept. 9 for "Manufacturing method of split gate trench device" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,414,351, issued on Sept. 9, was assigned to Excelliance MOS Corp. (Hsinchu, Taiwan).

"Manufacturing method of split gate trench device" was invented by Chu-Kuang Liu (Hsinchu County, Taiwan) and Hung-Kun Yang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A manufacturing method of a split gate trench device includes forming an epitaxial layer on a substrate, and forming a trench in the epitaxial layer, wherein the trench is divided into a first part and a second part above the first part. A shielding gate and a shielding oxide layer are then formed in the first part, wherein the shielding oxide layer is located between the shiel...