US Patent Issued to Excelitas Technologies on July 8 for "Tunable VCSEL with strain compensated semiconductor DBR" (Massachusetts Inventor)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,355,208, issued on July 8, was assigned to Excelitas Technologies Corp. (Waltham, Mass.).

"Tunable VCSEL with strain compensated semiconductor DBR" was invented by Mark E. Kuznetsov (Lexington, Mass.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Tunable VCSELs (TVCSELs) employing expanded material systems with expanded mechanical/optical design space for semiconductor DBR mirrors on GaAs substrates. One is the InGaAs/AlGaAsP material system. It adds indium In to decrease InGaAs H-layer bandgap for higher refractive index and higher DBR layer refractive index contrast. Adding phosphorus P gives independent control of bandgap and strain of AlGaAsP low ref...