ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,753, issued on May 27, was assigned to Everspin Technologies Inc. (Chandler, Ariz.).
"Magnetic memory using spin-orbit torque" was invented by Han-Jong Chia (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Spin-orbit-torque (SOT) segments are provided along the sides of free layers in magnetoresistive devices that include magnetic tunnel junctions. Current flowing through such SOT segments injects spin current into the free layers such that spin torque is applied to the free layers. The spin torque can be used as an assist to spin-transfer torque generated by current flowing vertically through the magnetic tunnel junction in order to ...