US Patent Issued to Everspin Technologies on March 4 for "Magnetoresistive stack and method of fabricating same" (Arizona, New York Inventors)

ALEXANDRIA, Va., March 5 -- United States Patent no. RE50,331, issued on March 4, was assigned to Everspin Technologies Inc. (Chandler, Ariz.).

"Magnetoresistive stack and method of fabricating same" was invented by Renu Whig (Chandler, Ariz.), Jijun Sun (Chandler, Ariz.), Nicholas Rizzo (Gilbert, Ariz.), Jon Slaughter (Slingerlands, N.Y.), Dimitri Houssameddine (Latham, N.Y.) and Frederick Mancoff (Chandler, Ariz.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A magnetoresistive element (e.g., a spin-torque magnetoresistive memory element) includes a fixed magnetic layer, a free magnetic layer, having a high-iron alloy interface region located along a surface of the free magnetic layer, wherein the high-iro...