US Patent Issued to Etron Technology, Invention And Collaboration Laboratory on Oct. 7 for "Method of forming a memory cell with a transistor and a capacitor" (Taiwanese Inventor)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,588, issued on Oct. 7, was assigned to Etron Technology Inc. (Hsinchu, Taiwan) and Invention And Collaboration Laboratory Pte. Ltd. (Singapore).

"Method of forming a memory cell with a transistor and a capacitor" was invented by Chao-Chun Lu (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention discloses a memory cell structure. The memory cell structure includes a silicon substrate, a transistor, and a capacitor. The silicon substrate has a silicon surface. The transistor is coupled to the silicon surface, wherein the transistor includes a gate structure, a first conductive region, and a second conductive region. The c...