US Patent Issued to Etron Technology, Invention And Collaboration Laboratory on March 18 for "Transistor structure with metal interconnection directly connecting gate and drain/source regions" (Taiwanese Inventor)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,255,256, issued on March 18, was assigned to Etron Technology Inc. (Hsinchu, Taiwan) and Invention And Collaboration Laboratory Pte. Ltd. (Singapore).

"Transistor structure with metal interconnection directly connecting gate and drain/source regions" was invented by Chao-Chun Lu (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor structure includes a semiconductor substrate, a gate structure, a channel region, and a first conductive region. The semiconductor substrate has a semiconductor surface. The gate structure is above the semiconductor surface, and a first concave is formed to reveal the gate structure. The channel region ...