US Patent Issued to Etron Technology, Invention And Collaboration Laboratory on July 8 for "Dynamic memory with sustainable storage architecture" (Taiwanese Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,354,646, issued on July 8, was assigned to Etron Technology Inc. (Hsinchu, Taiwan) and Invention And Collaboration Laboratory Pte. Ltd. (Singapore).

"Dynamic memory with sustainable storage architecture" was invented by Chao-Chun Lu (Taipei, Taiwan), Chun Shiah (Hsinchu, Taiwan) and Bor-Doou Rong (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention relates to DRAM with sustainable storage architecture. The DRAM comprises a DRAM cell with an access transistor and a storage capacitor, and a word line coupled to a gate terminal of the access transistor. During the period between the word line being selected to turn on...