US Patent Issued to eRaytroniks on Oct. 21 for "Memory circuit, dynamic random access memory and operation method thereof" (Taiwanese Inventor)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,074, issued on Oct. 21, was assigned to eRaytroniks Co. Ltd. (Kaohsiung, Taiwan).

"Memory circuit, dynamic random access memory and operation method thereof" was invented by E Ray Hsieh (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a dynamic random access memory, which includes a storage diode and a control-FET. The storage diode is composed of a gate-floating FET, and two source/drains of the gate-floating FET serve as a cathode and an anode of the storage diode. The control FET is electrically connected to the cathode or the anode of the storage diode."

The patent was filed on Oct. 12, 2023, under...