US Patent Issued to eRaytroniks on Jan. 13 for "One-time programmable memory circuit, one-time programmable memory and operation method thereof" (Taiwanese Inventor)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,525,307, issued on Jan. 13, was assigned to eRaytroniks Co. Ltd. (Kaohsiung, Taiwan).

"One-time programmable memory circuit, one-time programmable memory and operation method thereof" was invented by E Ray Hsieh (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a one-time programmable memory, which includes a one-time programmable (OTP) diode and a control field effect transistor (FET). One end of the OTP diode is electrically connected to a source line. The control FET includes a gate, a first source/drain and a second source/drain, the gate of the control FET is electrically connected to a word line, the f...