US Patent Issued to EPISIL TECHNOLOGIES on Sept. 23 for "Semiconductor devices and methods of manufacturing semiconductor device" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,302, issued on Sept. 23, was assigned to EPISIL TECHNOLOGIES INC. (Hsinchu Country, Taiwan).

"Semiconductor devices and methods of manufacturing semiconductor device" was invented by Yuan Liang Liu (Hsinchu County, Taiwan), Yi Chen Lee (Hsinchu County, Taiwan) and Yen Chang Chen (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device comprises: a SiC epitaxial layer and a first recess. The SiC epitaxial layer has: a p-type well region; a heavily doped n-type region on a surface of the p-type well region; and a heavily doped p-type region below the heavily doped n-type region and within the p-type well region. T...