US Patent Issued to ENTEGRIS on Oct. 21 for "High quantum efficiency dry resist for low exposure dose of EUV radiation" (Taiwanese, Singaporean Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,449,728, issued on Oct. 21, was assigned to ENTEGRIS INC. (Billerica, Mass.).

"High quantum efficiency dry resist for low exposure dose of EUV radiation" was invented by Tse-An Yeh (Taipei, Taiwan), Montray Leavy (Singapore) and Chun Kuang Chen (Zhubei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a module for creating a metal-containing film, including a reactor chamber; an inlet for providing an organo-metallic precursor to the reactor chamber; and an inlet for providing a reactive gaseous species to react with the organo-metallic precursor to form a metal-containing film. The reactive gaseous species includes ...