US Patent Issued to ENTEGRIS on May 13 for "Formulations to selectively etch silicon-germanium relative to silicon" (Connecticut Inventor)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,498, issued on May 13, was assigned to ENTEGRIS INC. (Billerica, Mass.).

"Formulations to selectively etch silicon-germanium relative to silicon" was invented by Steven M. Bilodeau (Oxford, Conn.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Compositions useful for the selective removal by etching of silicon-germanium-containing materials relative to silicon-containing materials, from a microelectronic device having features containing these materials at a surface, the compositions containing hydrofluoric acid, acetic acid, hydrogen peroxide, and at least one additional acid that will improve performance as measured by one or more of an etching rat...