ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,209,105, issued on Jan. 28, was assigned to ENTEGRIS INC. (Billerica, Mass.).

"Vapor deposition precursor compounds and process of use" was invented by Philip S. H. Chen (Bethel, Conn.), Eric Condo (Shelton, Conn.), Bryan C. Hendrix (Danbury, Conn.), Thomas H. Baum (New Fairfield, Conn.) and David Kuiper (Brookfield, Conn.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a plasma enhanced atomic layer deposition (PEALD) process for depositing etch-resistant SiOCN films. These films provide improved growth rate, improved step coverage and excellent etch resistance to wet etchants and post-deposition plasma treatments containing O2 and NH3 co-re...